Electronic properties of microcrystalline silicon

摘要

The electronic and optical properties of microcrystalline silicon films prepared by plasma enhanced chemical vapour deposition are investigated with Hall-effect,electrical conductivity,photothermal deflection spectroscopy and photoluminescence measurements.In particular,the influence of the grain size and the crystaline volume fraction on the conductivity,the carrier density and the Hall mobility is investigated in highly doped films.A percolation model is proposed to describe the observed transport dada. Photoluminescence properties were studied in undoped films.It is proposed that the photoluminescence is due to recombination at structural defects similar to those observed in crystalline silicon.