The impact of field plate resistivity on the performance of a novel high voltage thin film transistor incorporating a semi-insulating layer

摘要

The Semi-Insulating field plated High Voltage TFT (SI HVTFT) is a new poly-Si HVTFT structure with a much improved blocking capability and enhanced on-state performance [1][2].The unique feature of the SI HVTFT is the semi-insulating amorphous oxygen-doped Si (SIAOS) field plate which connects the gate to the drain and reshapes the potential distribution in the offset region.The leakage current,flowing through the SIAOS field plate during device operation,determines device performance.In this paper, both experimental and 2-DS simulation results for devices with different field plate conductivifties are used to investigate the impact of the field plate properties on the performance of the SI HVTFT structure.