The influence of sheet electron beam irradiation (SEBI) on the water-wettability of the (100) plane on the Si wafer etched by hydrofluoric acid (HF) is investigated. The wettability energy is estimated from the contact angle of water. The SEBI treatment decreases the contact angle and increases the interfacial energy. Aging decreases the change in the interfacial energy. A rate process is inferred for the interfacial energy changes on the Si wafer.
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