Optimization of Ti and Co Self-Aligned Silicide RTP for 0.10#mu#m CMOS

摘要

As CMOS technologies are scaled to 0.10 #mu#m and beyond, self-aligned silicide (salicide) processes find difficult challenges. As junction depths and linewidths are scaled, achieving both low sheet resistnace and low contact resistance maintaining low diode leakage becomes increasingly difficult. In this paper we present studies of Ti and co salicide processes implemented into a 0.10 #mu#m CMOS technology. We show that both for Ti and Co, the optimization of RTP parameters plays a crucial roll in achieving a successful implementation. For Co salicide, optimization of RTP conditiosn resutls in elimination of shallow junction leakage (its main scaling problem). Two -step RTP and one-step RTP Ti salicide processes are compared, showing the advantages of one-step RTP. The RTP process windows for low resistance narrow gates (the main scaling issue for Ti salicide) are analyzed. Pocesses with pre-amorphization, with Mo doping and with a combination of both are compared. An optimal process using Mo and preamorphization implants and one-step RTP is shown to reuslt in excellent device characteristics and low resistance to 0.06 #mu#m gates.