Tungsten and tungsten nitride Schottky contacts to 4H-SiC

摘要

Tungsten and tungsten nitride layers were deposited onto 4H-SiC by magnetron sputtering to obtain Schottky contacts stable at high temperature. The samples were annealed at 1200 deg C for 10 minutes. The solid phase reactions taking place during annealing were studied by cross-sectional TEM. Despite the formation of W_5Si_3 and W_2C phases, the contacts retained Schottky character after annealing at 1200 deg C.