Transmission electron microscopy, X-ray diffraction and photoluminescence study of InGaAs/GaAs heterostructures

摘要

This paper reports the results of our investigation of InGaAs/GaAs hetero-structures grown by molecular beam epitaxy (MBE) on a semi-insulating GaAs substrate. The het-erostructures consist of layers of In_(0.2)Ga_(0.8)As of different thickness embeded between thick GaAs layers. Cross-sectional transmission electron microscopy (XTEM) has been used to observe the perfection of layers and interfaces. Electron microscopic observations were combined with photoluminescence spectroscopy and x-ray diffraction studies of the heterostructures.