Interfaces and orientation relationships between diamond films, Si and beta-SiC interlayers were analyzed by conventional and high-resolution transmission electron microscopy for the early stages of film deposition on Si (001) substrates under optimized conditions using the microwave-assisted chemical vapour deposition process. Epitaxially oriented diamond nuclei form particularly on (111) facets of a nanocrystlaline beta-SiC interlayer. A model describing the early stages of diamond film formation on (001)-oriented Si substrates via formation of a beta-SiC interlayer is presented
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