Transmission Electron Microscopy of the CVD Diamond Film/Substrate Interface.

摘要

The structure of grain boundaries in the diamond lattice, and twin boundaries as a special case, received considerable attention in over thirty years. This is mainly due to the importance of defects in silicon and germanium to their usefulness as efficient semiconductors. Twin boundaries have equal importance to various properties of diamond films. Electrical and mechanical properties as well as migration mechanisms are all affected by the twin boundaries and their structure. The ever presence of twins in CVD diamond films makes their study even more important compared to semiconductors which can be grown without boundaries. The purpose of the study reported here is, therefore, to investigate the crystallography of twin boundaries which form in chemical vapor deposited (CVD) diamond films, and to compare them to the ones which were found in silicon and in germanium.