A compact model of holding voltage for latch-up in epitaxial CMOS

摘要

From different fabrication processes down to 0.35 /spl mu/m feature size and from two-dimensional device simulation, the holding voltage V/sub H/ for latch-up in epitaxial CMOS is found to be proportional to the square root of the holding current I/sub H/, specially for V/sub H//spl ges/2 V, while for V/sub H/>2 V the V/sub H/ linearly follows the I/sub H/. A slight modification of existing physically-based analytical models is set up for reproduction of all the observed dependencies, valid for different epitaxial layer thicknesses (t/sub epi/) and different anode-to-cathode spacings (L), along with a self-consistent interpretation by exploring the role of the base pushout width (h). By incorporating a structure-oriented holding current formula to this modified model, a compact, closed-form expression for V/sub H/ is produced directly as a function of t/sub epi/ and L. The compact model can serve as the scaling law for the holding voltage down to 1 V. The potential application of the compact model to low voltage, low power CMOS integrated circuits for latchup free operation is also projected.