Overgrowth of InGaAsP materials on rectangular-patterned gratings using GSMBE

摘要

Periodic perturbations of the refractive index is a foundation for realizing InP-based single mode photonic devices for all-optical communication networks. In order to achieve a particular refractive index modulation, such as that required by distributed feedback lasers and Bragg grating resonators, the periodic structure must reside within the device, necessitating epitaxial overgrowth. Results of an investigation of a low temperature oxide removal technique combined with gas source molecular beam epitaxial overgrowth of X-ray lithographically patterned rectangular gratings will be presented.