首页> 外文会议>High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on >Scaleable non-linear and bias-dependent low-frequency noise model for improved InP HEMT based MMIC oscillator design
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Scaleable non-linear and bias-dependent low-frequency noise model for improved InP HEMT based MMIC oscillator design

机译:可缩放的非线性和与偏置相关的低频噪声模型,用于基于InP HEMT的MMIC振荡器的改进设计

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摘要

This paper focuses on two modelling aspects to improve low phase noise MMIC oscillator design. As the modelling of InP based HEMTs has mainly been limited to the representation of the small-signal and thermal noise behaviour, we present a scaleable non-linear and bias-dependent low-frequency (LF) noise model.
机译:本文着重于两个建模方面,以改善低相位噪声MMIC振荡器的设计。由于基于InP的HEMT的建模主要限于小信号和热噪声行为的表示,因此我们提出了一种可缩放的非线性且依赖于偏置的低频(LF)噪声模型。

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