Oxide based compound semiconductor electronics

摘要

The discovery of an oxide created by the wet thermal oxidation of Al/sub x/Ga/sub 1-x/As compounds has created excitement in the general field of wet thermal oxidation of Al bearing compound semiconductor. We have investigated the use of these oxides for a variety of electronic applications in III-V technology. We have demonstrated oxide based MISFETs and GaAs On Insulator (GOI) technologies for high efficiency electronics as well as novel applications such as current aperturing for RTD's and vertical transistors.