Abstract: Acid-catalyzed intramolecular dehydration of phenylcarbinol is used to design highly sensitive negative resists for electron beam lithography. Of the phenylcarbinol resists evaluated in this study, the resist composed of 1,3-bis(alpha-hydroxyisopropyl)benzene (Diol-1), m/p-cresol novolak resin, and diphenyliodonium triflate (DIT) shows the best lithographic performance in terms of sensitivity and resolution. Fine 0.25-micrometer line-and-space patterns were formed by using the resist containing Diol-1 with a dose of 3.6 $mu@C/cm$+2$/ in conjunction with a 50 kV electron beam exposure system. !22
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机译：摘要：苯甲醇的酸催化分子内脱水用于电子束光刻设计高灵敏度的负性抗蚀剂。在这项研究中评估的苯基甲醇抗蚀剂中，由1,3-双（α-羟基异丙基）苯（Diol-1），间/对甲酚线型酚醛清漆树脂和三氟甲磺酸二苯基碘鎓（DIT）组成的抗蚀剂显示出最佳的平版印刷性能。灵敏度和分辨率方面。通过使用含有Diol-1的抗蚀剂（剂量为3.6 $ C / cm $ + 2 $ /）和50 kV电子束曝光系统，形成0.25微米的精细线距图案。 ！22
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