首页> 外文会议>Oxide Superconductor Physics and Nano-Engineering II >Low-energy oxygen ion-beam assisted growth of BaO/EuBa2Cu3O7-delta multilayers in ultrahigh vacuum
【24h】

Low-energy oxygen ion-beam assisted growth of BaO/EuBa2Cu3O7-delta multilayers in ultrahigh vacuum

机译:低能氧离子束在超高真空下辅助BaO /EuBa2Cu3O7-δ多层膜的生长

获取原文

摘要

Abstract: Molecular beam epitaxial growth of cuprate oxide superconducting thin films using a mass separated, low energy, O$+$PLU$/ beam source, is discussed. The mono-valent O$+$PLU$/ ion is chemically, highly reactive, and its kinetic energy at 10's of electron volts, is significant. It allows the growth of REBa$-2$/Cu$-3$/O$-7$MIN@$delta$/ (REBCO) thin films at low pressures and temperatures. The effective over-pressure of the O$+$PLU$/ ions at the substrate being 2 $MUL 10$+$MIN@7$/ Torr, and the optimum growth temperature 500 degrees C. These conditions are below the currently accepted stability line for the growth of REBCO thin films. We characterize the physical and chemical properties of the O$+$PLU$/ ion beam, and its effect on superconducting thin films. We have grown highly crystalline BaO and EuBa$-2$/Cu$-3$/O$-7$MIN@$delta$/ (EBCO) thin films on SrTiO$-3$/ substrates. The full width at half maximum of the rocking curves for BaO(002) $EQ 0.07 degrees and that for the EBCO (005) peak $EQ 0.05 degrees. Also, we found that BaO is a good insulating material (1.7 $MUL 10$+13$/ approximately ega@m at 4K), with an excellent lattice match to EBCO, therefore a suitable candidate as an insulating layer in multilayer structures. The results of the first growth studies of BaO/EBCO multilayers are discussed. !20
机译:摘要:讨论了使用质量分离,低能量,O $ + $ PLU $ /束源的分子束外延生长铜酸盐氧化物超导薄膜的方法。单价O $ + $ PLU $ /离子具有化学活性,具有很高的反应性,在10伏电子伏时的动能非常重要。它允许在低压和低温下生长REBa $ -2 $ / Cu $ -3 $ / O $ -7 $ MIN @ $ delta $ /(REBCO)薄膜。基板上O ++ PLU $ /离子的有效过压为2 $ MUL 10 $ + $ MIN @ 7 $ / Torr,最佳生长温度为500摄氏度。这些条件低于目前公认的稳定性REBCO薄膜的生产线。我们表征了O $ + $ PLU $ /离子束的物理和化学性质,及其对超导薄膜的影响。我们已经在SrTiO $ -3 $ /衬底上生长了高度结晶的BaO和EuBa $ -2 $ / Cu $ -3 $ / O $ -7 $ MIN @ $ delta $ /(EBCO)薄膜。 BaO(002)$ EQ的摇摆曲线的半峰全宽为0.07度,EBCO(005)峰值为$ EQ的摇摆半峰全宽为0.05度。此外,我们发现BaO是一种良好的绝缘材料(4K时为1.7 $ MUL 10 $ + 13 $ /约ega @ m),与EBCO的晶格匹配极佳,因此是多层结构中作为绝缘层的合适候选材料。讨论了BaO / EBCO多层膜的首次生长研究结果。 !20

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号