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Semiconductor epitaxial growth method using ultrahigh vacuum chemical vapor deposition
Semiconductor epitaxial growth method using ultrahigh vacuum chemical vapor deposition
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机译:利用超高真空化学气相沉积的半导体外延生长方法
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摘要
The present invention relates to an epitaxial growth method necessary for the manufacture of semiconductor devices, and more particularly, to a semiconductor epitaxial growth method using a low-concentration carbon impurity and capable of epitaxial growth even at a low temperature and using a more economical ultra-high vacuum chemical vapor deposition The purpose of the growth method is to provide.
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