Performance comparison of 1300-nm semiconductor optical amplifiers with bulk and MQW active layers

摘要

Abstract: Comparable gain can be obtained in semiconductor optical amplifiers (SOAs) with either bulk or strained-layer multiple quantum well (MQW) active layer. Their polarization dependence and saturation power are affected by strain and structure designs. In this study, SOAs with compressively strained MQWs have exhibited highest gain and saturation power, while buried waveguide SOAs with large optical cavity have lower polarization sensitivity than the ridge waveguide SOAs. !5