Analysis and optimization of planar rectangular T-anode Schottky barrier diodes for submillimeter-wave multipliers

摘要

We report on the circuit modeling and analysis of a planar rectangular anode Schottky barrier diode "T-anode" to predict multiplier performance using these devices and to optimize their design. A rectangular anode Schottky barrier diode model, including saturation effect, has been developed and implemented in Hewlett Packard's Microwave Design System (MDS). This model, based on the diode geometry and semiconductor wafer structure, is used to optimize physical parameters such as the doping, epilayer thickness and anode size and shape in order to obtain maximum conversion efficiency. Different multiplier configurations (single and multiple diode doubler and quadrupler) to 640 GHz are analyzed and compared.