Modeling of boron, phosphorus, and arsenic implants into single-crystal silicon over a wide energy range (few keV to several MeV)

摘要

In this paper is presented for the first time an accurate, physically based simulator for boron, arsenic, and phosphorus ion implantation covering a very wide range of energies from a few keV to several MeV. This wide range of energies, as well as on-axis and off-axis implantations, is covered by a single, comprehensive model. Combined with previously developed models for damage accumulation, this model allows physically-based simulation of 3-D profiles over an extremely wide range of implant conditions.