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Optical absorption and thermal expansion of semiconductor glasses As-S-Ge by topological transition

机译:拓扑跃迁对半导体玻璃As-S-Ge的光吸收和热膨胀

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Abstract: The effect of mean coordination number $OBAR@r on the optical absorption in the region of exponential tail and on the thermal expansion of chalcogenide glasses As-S-Ge are presented. Several important parameters such as optical gap, disorder energy, coefficient of the temperature expansion and their variation with composition have been found. These parameters are shown to be strongly influenced by average coordination number, especially in the region of topological transitions. It is significant that all these parameters exhibit maximums at $OBAR@r approximately equal to 2.7. The explanation is put forward in light of a model which predicts the transformation of the glassy network from two- to three- dimensional configuration at $OBAR@r approximately equal to 2.7. The correlation between optical gap (i.e. intrinsic absorption) and thermal expansion of the glasses shows the possibilities of absorption spectroscopy for testing the properties of non-crystalline materials including the thermo-mechanical ones. !9
机译:摘要:提出了平均配位数$ OBAR @ r对指数尾部区域的光吸收和硫族化物玻璃As-S-Ge的热膨胀的影响。已经发现了几个重要参数,例如光学间隙,无序能量,温度膨胀系数及其随组成的变化。这些参数显示出受平均配位数的强烈影响,尤其是在拓扑转换区域。重要的是,所有这些参数在$ OBAR @ r处都显示出最大值,大约等于2.7。根据模型预测进行解释,该模型预测玻璃状网络在$ OBAR @ r处大约等于2.7时从二维配置转换为三维配置。玻璃的光学间隙(即本征吸收)和热膨胀之间的相关性表明,吸收光谱法可用于测试包括热机械材料在内的非晶材料的性能。 !9

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