首页> 美国卫生研究院文献>Chemical Science >Experimental and theoretical evidence of a supercritical-like transition in an organic semiconductor presenting colossal uniaxial negative thermal expansion
【2h】

Experimental and theoretical evidence of a supercritical-like transition in an organic semiconductor presenting colossal uniaxial negative thermal expansion

机译:实验和理论证据表明有机半导体中呈现超大单轴负热膨胀的超临界状转变

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Thermal expansion coefficients of most materials are usually small, typically up to 50 parts per million per kelvin, and positive, i.e. materials expand when heated. Some materials show an atypical shrinking behavior in one or more crystallographic directions when heated. Here we show that a high mobility thiophene-based organic semiconductor, >BHH-BTBT, has an exceptionally large negative expansion between 95 and 295 K (–216 < α2 = αb < –333 MK–1), being compensated by an even larger positive expansion in the perpendicular direction (287 < α1 < 634 MK–1). It is shown that these anomalous expansivities are completely absent in >C8-BTBT, a much studied organic semiconductor with a closely related molecular formula and 3D crystallographic structure. Complete theoretical characterization of >BHH-BTBT using ab initio molecular dynamics shows that below ∼200 K two different >α and >β domains exist of which one is dominant but which dynamically exchange around and above 210 K. A supercritical-like transition from an >α dominated phase to a >β dominated phase is observed using DSC measurements, UV-VIS spectroscopy, and X-ray diffraction. The origin of the extreme negative and positive thermal expansion is related to steric hindrance between adjacent tilted thiophene units and strongly enhanced by attractive S···S and S···C interactions within the highly anharmonic mixed-domain phase. This material could trigger the tailoring of optoelectronic devices highly sensitive to strain and temperature.
机译:大多数材料的热膨胀系数通常很小,通常高达每开尔文百万分之五十。正数,即材料在加热时会膨胀。一些材料在加热时在一个或多个晶体学方向上表现出非典型的收缩行为。在这里,我们表明,基于高迁移率噻吩的有机半导体> BHH-BTBT 在95至295 K之间具有非常大的负膨胀(–216 <α2=αb<–333 MK – 1 ),可以通过在垂直方向上更大的正膨胀来补偿(287 <α1<634 MK –1 )。结果表明,在> C8-BTBT 中,这些异常膨胀是完全不存在的,C8-BTBT 是一种经过广泛研究的有机半导体,具有密切相关的分子式和3D晶体结构。使用从头算分子动力学对> BHH-BTBT 的完整理论表征表明,在约200 K以下,存在两个不同的>α和>β域,其中一个是占主导地位,但在210 K左右及以上动态交换。使用DSC测量,UV-VIS光谱观察到从>α占主导的相到>β占主导的相的超临界状转变。和X射线衍射。极端的负热膨胀和正热膨胀的起源与相邻倾斜的噻吩单元之间的空间位阻有关,并通过高度非调和混合域相中有吸引力的S··S和S··C相互作用而大大增强。这种材料可能会触发对应变和温度高度敏感的光电设备的定制。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号