Far-infrared spectroscopy of polar semiconductor superlattices (GaAs-GaPxAs1-x)

摘要

Abstract: The features of the infrared reflection spectroscopy are considered for long-period semiconductor superlattices. Taking the GaAs/GaP$-x$/As$-1$MIN@x$/ superlattice system as an example, the applicability of the bulk model is related to light penetration/localization depths. We propose to use relative measurements (i.e. to study R$-p$/R$-s$/ spectra) for raising the accuracy of determination of superlattice parameters by solving the inverse problem. !16