Novel low-stress SiO2-xFx film deposited by room-temperture liquid-phase deposition method

摘要

Abstract: To develop a low-stress thin film for micromachined devices, a novel liquid-phase deposition (LPD) SiO$-2 $MIN x$/F$-x$/ technique utilizing silica-saturated H$-2$/SiF$-6$/ solution with H$-2$/O addition only is proposed. Due to extremely low-temperature processing and fluorine incorporation, the stress of the LPD SiO$-2 $MIN x$/F$-x$/ film can be less than 100 MPa. In this paper, we found that the deposition parameter of H$-2$/O addition has much efect on the stress of as-deposited LPD oxide. The stress variations with thermal cycling has also been clarified. We found that the LPD SiO$-2 $MIN x$/F$-x$/ film will be a good candidate as low-stress film for micromachined devices. !23