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Microdiffraction measurements of the effects of grain alignment on critical current in high-temperature superconductors

机译:高温超导体中晶粒取向对临界电流影响的微衍射测量

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Abstract: While single crystals and epitaxial thin films of high temperature superconductors can carry large current densities, devices useful for applications such as power transmission and magnets cannot be produced because polycrystalline material cannot carry sufficient current densities. Efforts are underway to produce polycrystalline material in which grains are aligned to carry high current densities. We report x-ray and electron microdiffraction measurements of local grain alignment and models of how this grain alignment affects the critical current densities. TlCa$-2$/Sr$-2$/Cu$-3$/O$-x$/ samples can be grown on polycrystalline substrates with good c axis alignment but no overall a axis alignment. In TlCa$-2$/Sr$-2$/Cu$-3$/O$-x$/, high critical current occurs in regions in which there is local a axis alignment. X-ray microdiffraction measurements of grain orientation were made with a monochromatic, 100 micrometer diameter beam produced by inserting a pinhole at the focus of an NSLS bending magnet beamline. Local grain orientation was measured by observing Bragg reflection as the sample was rotated. While x-ray data was taken at this low resolution over large areas, the orientation of individual grains was measured over small regions by measuring the Kikuchi pattern produced by inelastic scattering from a 100 nm electron beam. In both cases, the sample position was scanned to map grain orientation. With advanced x-ray optics currently under development, high-resolution maps of grain orientation will be available without the elaborate surface preparation required for electron diffraction. This will facilitate study of samples prepared in a wider variety of forms. !17
机译:摘要:虽然高温超导体的单晶和外延薄膜可以承载大电流密度,但由于多晶材料无法承载足够的电流密度,因此无法生产用于诸如电力传输和磁体等应用的器件。正在努力生产多晶材料,其中晶粒被对准以承载高电流密度。我们报告了局部晶粒排列的X射线和电子微衍射测量结果以及该晶粒排列如何影响临界电流密度的模型。 TlCa $ -2 $ / Sr $ -2 $ / Cu $ -3 $ / O $ -x $ /样品可以在具有良好c轴对齐但总体上没有轴对齐的多晶基板上生长。在TlCa $ -2 $ / Sr $ -2 $ / Cu $ -3 $ / O $ -x $ /中,高临界电流发生在局部存在轴对准的区域中。用单色的直径为100微米的光束进行晶粒取向的X射线微衍射测量,该光束是通过在NSLS弯曲磁体光束线的焦点处插入针孔而产生的。通过观察样品在旋转时的布拉格反射来测量局部晶粒取向。虽然X射线数据是在低分辨率下在大面积上拍摄的,但单个晶粒的方向却是通过测量从100 nm电子束的非弹性散射产生的菊池图案来在小区域上测量的。在这两种情况下,均扫描样品位置以绘制晶粒取向图。随着当前正在开发的先进的X射线光学器件,无需电子衍射所需的精细表面准备工作,即可获得高分辨率的晶粒取向图。这将有助于研究以多种形式制备的样品。 !17

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