Processing and characterization of a 128 x 128 GaAs/GaAlAs quantum well infrared detector array

机译：128 x 128 GaAs / GaAlAs量子阱红外探测器阵列的处理和表征

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

Abstract: A 128 multiplied by 128 GaAs/GaAlAs quantum well infrared (QWIP) sensing array with a 2- D grating and indium bumps has been fabricated. The array has been characterized prior to flip chip bonding, both electrically and optically. The obtained responsivity and dark current of selected pixels in the array indicate high material uniformity. Design and processing issues are discussed. !10

机译：摘要：制作了一个128乘以128 GaAs / GaAlAs量子阱红外（QWIP）传感阵列，该阵列具有二维光栅和铟凸块。在倒装芯片键合之前，已在电学和光学上对阵列进行了表征。阵列中选定像素的响应度和暗电流表示材料均匀性高。讨论了设计和处理问题。！10

著录项

来源
《Growth and Characterization of Materials for Infrared Detectors II》|1995年|p.159-166|共8页
会议地点
作者
Shmuel I. Borenstain; Jerusalem College of Technology; Jerusalem; Israel; U.Arad; Jerusalem College of Technology; Jerusalem; Israel; S.Afanasyev; Jerusalem College of Technology; Jerusalem; Israel; I.Luybina; Jerusalem College of Technology; Jerusalem; Israel; A.Segal; Jerusalem College of Technology; Jerusalem; Israel.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. 15-/spl mu/m 128/spl times/128 GaAs/Al/sub x/Ga/sub 1-x/As quantum well infrared photodetector focal plane array camera [J] . Gunapala S.D., Park J.S. IEEE Transactions on Electron Devices . 1997,第1期

机译：15- / spl mu / m 128 / spl次/ 128 GaAs / Al / sub x / Ga / sub 1-x / As量子阱红外光电探测器焦平面阵列相机
2. A Low-Cost 128 $times$ 128 Uncooled Infrared Detector Array in CMOS Process [J] . Eminoglu S., Tanrikulu M. Y., Akin T. Journal of Microelectromechanical Systems . 2008,第1期

机译：CMOS工艺中的低成本128美元乘以128的非冷却红外探测器阵列
3. LWIR 128*128 GaAs/AlGaAs multiple quantum well hybrid focal plane array [J] . Kozlowski L.J., Williams G.M. IEEE Transactions on Electron Devices . 1991,第5期

机译：LWIR 128 * 128 GaAs / AlGaAs多量子阱混合焦平面阵列
4. Processing and characterization of a 128 x 128 GaAs/GaAlAs quantum well infrared detector array [C] . Shmuel I. Borenstain, U.Arad, S.Afanasyev, SPIE Conference on Growth and characterization of materials for infrared detectors . 1995

机译：128×128 GaAs / Gaalas量子孔红外探测器阵列的加工和表征
5. A DSP-based real-time optical Doppler tomography system beamforming study of a 10 x 128 1.75D ultrasound array. [D] . Yan, Shikui. 2005

机译：基于DSP的10 x 128 1.75D超声阵列的实时光学多普勒层析成像系统波束成形研究。
6. CCD Multi-Ion Image Sensor with Four 128 × 128 Pixels Array [O] . Toshiaki Hattori, Fumihiro Dasai, Hikaru Sato, 2019

机译：具有四个128×128像素阵列的CCD多离子图像传感器
7. Deformation Analysis of 128×128 Infrared Detector with Reticulated InSb Pixel Array [O] . Xiaoling Zhang, Yawei Liu, Liwen Zhang, 2015

机译：具有网状INSB像素阵列的128×128红外探测器的变形分析
8. 15-micro-m 128 x 128 GaAs/Al(x)Ga(1-x) As Quantum Well Infrared Photodetector Focal Plane Array Camera [R] . Gunapala, S. D. , Park, J. S. , Sarusi, G. , 1997

机译：15微米128 x 128 Gaas / al（x）Ga（1-x）as量子阱红外光电探测器焦平面阵列相机

Processing and characterization of a 128 x 128 GaAs/GaAlAs quantum well infrared detector array

摘要

著录项

相似文献

相关主题

期刊订阅