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Stability of steady state solutions to a hydrodynamic model of semiconductors

机译:半导体流体力学模型稳态解的稳定性

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Abstract: We discuss the stability of steady state solutions for a hydrodynamic model of semiconductors. We study the case where the doping profile is close to a positive constant and depends on the spacial variable x. We shall show that the steady state solution is asymptotically stable with respect to small perturbations in H$+2$/(R). !9
机译:摘要:我们讨论了半导体水动力模型稳态解的稳定性。我们研究掺杂轮廓接近正常常数并且取决于间隔变量x的情况。我们将表明稳态解决方案在H $ + 2 $ /(r)中的小扰动方面是渐近稳定的。 !9

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