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Existence and stability of stationary solutions for the general nonisentropic hydrodynamic semiconductor models.

机译:一般非等熵流体力学半导体模型固定解的存在性和稳定性。

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摘要

In this thesis, we discuss a nonisentropic hydrodynamic model for semiconductor with heat sources. The model is derived from the Boltzmann equation by taking the first three moments with proper closures, and consists of a set of Euler equations with certain source terms for hydrodynamical quantities such as the density, the velocity and the temperature, and a Poisson's equation for the electric potential, which makes the model self-consistent. That is, the nonisentropic (full) hydrodynamic semiconductor model with the heat source is a hyperbolic-parabolic-elliptic coupled system. We first investigate the thermal equilibrium and non-thermal equilibrium stationary solutions for one- and multi-dimensional full hydrodynamic semiconductor model supplemented with the proper boundary conditions and the more general semiconductor devices in terms of the Schauder's fixed point principle, the Stampacchia truncation methods, the iteration method, and the basic energy estimates. For the non-thermal equilibrium stationary solutions, we deal mainly with the subsonic case. Next, we present the asymptotic analysis such as the zero-electron-mass limit, the zero-relaxation-time limit and the quasi-neutral limit for the stationary hydrodynamic models with general boundary data. Finally, using a delicate energy method, we study the large time asymptotic stability of these stationary solutions. Furthermore, we can establish the global existences and asymptotic behavior of smooth solutions for one- and multi-dimensional Cauchy problems with initial data which are close to the stationary states for the nonisentropic hydrodynamic model with the heat source, and we find that the solutions tend to the stationary solutions exponentially fast as t → +infinity. At the same time, we also obtain the global existences and asymptotic behaviors of smooth solutions for multi-dimensional initial boundary value problems with small perturbed initial data and the proper boundary value conditions for the nonisentropic hydrodynamic model with the heat source, and prove the similar convergence results as for the Cauchy problem.
机译:本文讨论了热源半导体的非等熵流体力学模型。该模型是从玻尔兹曼方程中通过适当闭合将前三个矩导出而得出的,它由一组具有一定流体动力学量(例如密度,速度和温度)源项的欧拉方程组和一个泊松方程组成。电势,使模型自洽。即,具有热源的非等熵(全)流体力学半导体模型是双曲-抛物-椭圆耦合系统。我们首先根据Schauder的不动点原理,Stampacchia截断法,研究一维和多维全流体动力学半导体模型的热平衡和非热平衡平稳解,并补充了适当的边界条件和更一般的半导体器件,迭代方法和基本能量估算。对于非热平衡平稳解,我们主要处理亚音速情况。接下来,我们给出了具有一般边界数据的平稳流体力学模型的渐近分析,例如零电子质量极限,零松弛时间极限和准中性极限。最后,使用精细的能量方法,我们研究了这些固定解的长时间渐近稳定性。此外,我们可以建立一维和多维柯西问题光滑解的整体存在性和渐近性,其初始数据接近于带有热源的非等熵流体力学模型的稳态,并且我们发现解趋于平稳解的幂指数以t→+无限快。同时,我们还获得了具有较小扰动初始数据的多维初始边界值问题的光滑解的整体解的存在性和渐近性,并为热源非等熵流体力学模型设定了适当的边界值条件,并证明了相似性。对于柯西问题,收敛结果。

著录项

  • 作者

    Li, Yeping.;

  • 作者单位

    The Chinese University of Hong Kong (People's Republic of China).;

  • 授予单位 The Chinese University of Hong Kong (People's Republic of China).;
  • 学科 Mathematics.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 147 p.
  • 总页数 147
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 数学;
  • 关键词

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