Two-Photon Excited Photoluminescence in InGaN Multi-Quantum-Wells Structures

摘要

In this work, we report on the two-photon absorption induced luminescence of InGaN multiple quantum wells grown on sapphire. When the sample was excited by femtosecond near-infrared laser pulses at room temperature, an intense luminescence signal peaked at ~415 nm from the sample was observed, which indicates strong nonlinear optical effect in InGaN quantum well structures. The interferometric autocorrelated luminescence traces were recorded to verify the second order nonlinearity of the luminescence. In addition, the strong second harmonic generation signal of the excitation laser was also observed. The mechanism of the two-photon excited photoluminescence in InGaN quantum wells was discussed