Surface damage on InP induced by photo- and plasma-assisted chemical vapor deposition of passivation films

摘要

Process-induced near-surface defects in InP introduced during PECVD, photoand ECR-assisted techniques for insulator deposition were studied using Schottky DLTS, MIS DLTS and MIS C-V techniques. Interface states and near-surface bulk traps were clearly distinguished by the MIS DLTS technique. The spatial distribution of the near-surface traps within the deposited insulator were determined by analyzing MIS DLTS and C-V data. The analysis showed that photo CVD SiO/sub 2/ deposition is superior to PECVD SiO/sub 2/ deposition due to absence of process-induced bulk traps and to smaller density of interface states with a narrower spatial distribution.