Selective MOCVD growth of InP around dry-etched mesas with various patterns for photonic integrated circuits

摘要

In this paper we have investigated the selective growth of a pnp-InP layer structure as well as the mass-transport effect around dry-etched mesas with various crystallographic directions of stripes. The behavior is found to depend remarkably on the stripe direction. The selective embedding growth around waveguide patterns, such as bifurcations or crossings, is also investigated.