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Performance of TI high density interconnect for 1 GHz digital MCM applications

机译:TI高密度互连在1 GHz数字MCM应用中的性能

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Multichip modules have inherent performance advantages over other packaging technologies to which digital designers are turning to meet stringent system performance requirements. However, for designs requiring up to 1 GHz clocks and subnanosecond rise times, a thorough understanding of the multichip module interconnect is essential to fully utilize performance advantages. At these operating speeds, interconnect as Short as one inch can limit system performance in a poorly designed module. This paper presents preliminary data from a joint effort between Texas Instruments (TI) and the Mayo Foundation under sponsorship of the Advanced Research Projects Agency (ARPA) which is characterizing the HDI process for use in high speed designs. Results indicate that HDI technology is well suited for use in digital designs that have clock frequencies as high as one gigahertz and subnanosecond rise times with acceptable noise and signal degradation.
机译:与其他封装技术相比,多芯片模块具有固有的性能优势,数字设计人员正在转向其他封装技术来满足严格的系统性能要求。但是,对于需要高达1 GHz时钟和亚纳秒上升时间的设计,充分理解多芯片模块互连对于充分利用性能优势至关重要。在这些工作速度下,短至一英寸的互连会限制设计欠佳的模块的系统性能。本文介绍了得克萨斯仪器(TI)与梅奥基金会(Mayo Foundation)在高级研究计划局(ARPA)的赞助下共同努力的初步数据,该研究旨在表征用于高速设计的HDI工艺。结果表明,HDI技术非常适用于时钟频率高达1 GHz和亚纳秒上升时间以及可接受的噪声和信号降级的数字设计。

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