Low-noise 650 nm-band AlGaInP visible lasers with highly-doped saturable absorbing (HDSA) layer

摘要

Self-sustained pulsating 650 nm-band AlGaInP visible laser diodes were successfully demonstrated by adopting novel structure, which has highly doped saturable absorbing layer. Short carrier lifetime, which is indispensable for pulsation, was realized by applying high doping concentration to the saturable absorbing layer. 500 /spl mu/m-long devices with 51%/51% coated facets were fabricated, resulting in the threshold current of 65 mA at room temperature. The relative intensity noise was below -134 dB/Hz in the temperature ranging from 20 to 60/spl deg/C at 5 mW.