InAlAs/InGaAs MSM PDs heteroepitaxially grown on Si

摘要

To study the performance and reproducibility of photodiodes (PDs) on Si in the long-wavelength region, InAlAs/InGaAs metal-semiconductor-metal (MSM) PDs were fabricated on high-quality heteroepitaxial InP layers on Si substrates. The PDs showed dark currents of 0.5-2/spl times/10/sup -8/ A and responsivity of 0.05-0.15 A/W at the bias voltage of 5 V. These DC characteristics are similar to those of devices on InP substrates, The PDs on Si had pulse responses with rise times of 30-70 ps, fall times of 300-500 ps and full widths at half maximum of 150-400 ps.