Epitaxially lifted-off GaAs MESFETs on InP for optoelectronic integration

摘要

Epitaxial lift-off (ELO) is a technique by which epitaxially grown layers are lifted off their growth substrate and subsequently reattached to a new one. The preprocessing approach where ELO devices and circuits on the host are fabricated before transplantation offers the advantages that (a) fully optimized devices provided by a foundry service can be combined, (b) the devices can be tested prior to transplantation, and (c) the final result is a monolithic integration. The authors present results on the transplantation of foundry MESFETs to InP, and compare their behavior and the extracted parameters for a nonlinear MESFET-model before and after transfer.