首页> 外文会议>Electronic Components and Technology Conference, 1992. Proceedings., 42nd >Dielectric and piezoelectric properties of PZT ceramics doped with 4PbO-B/sub 2/O/sub 3/
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Dielectric and piezoelectric properties of PZT ceramics doped with 4PbO-B/sub 2/O/sub 3/

机译:掺杂4PbO-B / sub 2 / O / sub 3 /的PZT陶瓷的介电和压电性能

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Piezoelectric materials consisting of Pb(Zr/sub x/Ti/sub 1-x/) O/sub 3/ (x=0.52 and 0.94) and glass powder 4PbO-B/sub 2/O/sub 3/ were studied. It is shown that, if a small amount of 4PbO-B/sub 2/O/sub 3/ glass powder is added to the PZT system, the sintering temperature can be reduced and the dielectric and piezoelectric properties will be enhanced. For PZT (52/48) doped with 0.2 wt.% 4PbO-B/sub 2/O/sub 3/ and sintered at 1150 degrees C for 30 h, the planar coupling factor k/sub p/ is higher than that of plain PZT (52/48). For PZT (94/6) doped with 0.5 wt.% 4PbO-B/sub 2/O/sub 3/, a planar coupling factor and a dielectric constant equal to 0.16 and 330, respectively, can be attained with sintering at 950 degrees C for 30 h.
机译:研究了由Pb(Zr / sub x / Ti / sub 1-x /)O / sub 3 /(x = 0.52和0.94)和玻璃粉4PbO-B / sub 2 / O / sub 3 /组成的压电材料。结果表明,如果将少量的4PbO-B / sub 2 / O / sub 3 /玻璃粉末添加到PZT系统中,则可以降低烧结温度,并提高介电和压电性能。对于掺有0.2 wt。%4PbO-B / sub 2 / O / sub 3 /的PZT(52/48)在1150摄氏度下烧结30小时,其平面耦合因子k / sub p /高于平面耦合因子k / sub p / PZT(52/48)。对于掺杂有0.5 wt。%4PbO-B / sub 2 / O / sub 3 /的PZT(94/6),在950度烧结时可以获得平面耦合系数和介电常数分别等于0.16和330 C保持30小时。

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