Piezoelectric and dielectric properties of Cr-doped PSN-PZN-PZT quaternary piezoelectric ceramics

摘要

PSN-PZN-PZT + x wt. percent Cr_2O_3, x = 0.0-0.9, were prepared by conventional mixed oxide techniques at sintering temperatures of 1220 deg C-1300 deg C for 2 h. The effect of sintering temperature on the microstructure and the piezoelectric properties was investigated by XRD, SEM, and other conventional measurement. The result indicated that with temperature increasing, the valence of Cr ion from Cr~(5+) or Cr~(6+) changes into Cr~(3+), and the piezoelectric properties turn hard. With increasing Cr_2O_3 content, the amount of rhombohedral phases increases and the morphotropic boundary phase is correspondingly shifts to rhombohedral phase. A uniform microstructure and excellent comprehensive properties were obtained at 1240 deg C as the amount of Cr_2O_3 is 0.5 wt. percent.