Passivation technology using an ultrathin Si interface control layer for air-exposed InGaAs surfaces

摘要

The growth of a surface passivation structure for In/sub 0.53/Ga/sub 0.47/As that utilizes an ultrathin molecular beam epitaxial (MBE) Si interface control layer (ICL) is discussed. The structure was realized by growing all the layers, including the MBE InGaAs layer, the MBE-Si ICL, and the outer photo-CVD SiO/sub 2/ layer, in a UHV-based system without air exposure. It is shown that by utilizing a suitable surface treatment technique prior to the growth of the Si ICL, the surface passivation technology becomes applicable to air-exposed InGaAs surfaces.