A very wide spectrum superluminescent diode at 1.3 mu m

摘要

An approach that broadens the emission spectral width of superluminescent diodes (SLDs) is proposed. The fabrication of 1.3- mu m InGaAsP/InP SLDs incorporating a structure of tandem active layers is described. For this device, the spectral width is broadened over 100 nm, achieving a short coherence length of 9.2 mu m, one-fourth that of conventional 1.3- mu m SLDs.