首页> 外文会议>Indium Phosphide and Related Materials, 1991., Third International Conference. >Impurity effects on generation and motion of dislocations in InP
【24h】

Impurity effects on generation and motion of dislocations in InP

机译:杂质对InP位错产生和运动的影响

获取原文

摘要

Effects of impurities on the dynamic activities of dislocations in InP are discussed. It is shown that S impurity enhances the motion of alpha dislocations and retards the motion of beta and screw dislocations. Zn impurity strongly retards the motion of all types of dislocations. Ga and As impurities have little effect on the mobilities of dislocations, but strongly suppress the generation of alpha dislocations.
机译:讨论了杂质对InP位错动态活性的影响。结果表明,S杂质增强了α位错的运动,并阻碍了β位和螺位错的运动。锌杂质强烈地阻碍了所有类型的位错的运动。 Ga和As杂质对位错的迁移率几乎没有影响,但是强烈抑制了α位错的产生。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号