Highly uniform InGaAlP/InGaP/GaAs structures by low pressure MOVPE

摘要

High-quality In/sub 0.5/Ga/sub 0.5/P and InGaAlP layers have been grown by low-pressure metalorganic vapor-phase epitaxy (MOVPE) in a vertical, high-speed rotating-disk reactor. The three most important areas of uniformity investigated were thickness, doping, and wavelength. Highly uniform films were obtained both on a single 50-mm-diameter wafer at the center of a 5-in-diameter wafer carrier and on three 50-mm-diameter GaAs wafers symmetrically placed on a 5-in-diameter carrier. The effects of temperature and V/III ratio on morphology and composition are discussed. Initial results on InGaAlP/InGaP DH lasers are presented.