Determination of the interface structure of very thin GaInAs/InP quantum wells

摘要

GaInAs/InP quantum wells with thicknesses between two and ten monolayers were grown in order to study the interface structures in the vertical and lateral directions. The vertical structures and optical properties are shown to be strongly dependent on the growth interruptions used. The optical transitions are described by a theoretical model of the quantum well, which takes the interfaces into account. The monolayer splitting of very thin quantum wells was used to characterize the interface structures in the lateral plane. Scanning cathodoluminescence (SCL) images provide information on the size and lateral distribution of the growth islands. High resolution transmission electron microscopy (HRTEM) measurements show an internal interface roughness on both sides of the quantum wells.