首页> 外文会议>Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual >High speed 8:1 multiplexer and 1:8 demultiplexer ICs using GaAs DCFL circuit
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High speed 8:1 multiplexer and 1:8 demultiplexer ICs using GaAs DCFL circuit

机译:使用GaAs DCFL电路的高速8:1多路复用器和1:8解复用器IC

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An 8:1 multiplexer and 1:8 demultiplexer chip set composed of GaAs direct-coupled FET logic (DCFL) has been designed and fabricated. The circuits were designed with tree type architecture and used memory cell type flip-flop (MCFF) as a flip-flop. Self-aligned GaAs MESFETs with a gate length of 0.5 mu m were used in these ICs. Both circuits operated up to 8 Gb/s with power dissipations of 1.5 W for the multiplexer and 1.9 W for the demultiplexer at a single power supply voltage of 2.0 V.
机译:设计和制造了由GaAs直接耦合FET逻辑(DCFL)组成的8:1多路复用器和1:8解复用器芯片组。电路采用树型架构设计,并使用存储单元型触发器(MCFF)作为触发器。这些IC使用栅极长度为0.5μm的自对准GaAs MESFET。在2.0 V的单电源电压下,两个电路的工作速率均高达8 Gb / s,多路复用器的功耗为1.5 W,多路分解器的功耗为1.9W。

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