Leakage current reduction in shallow PN junction

摘要

An investigation of the influence of oxidation-induced stacking faults (OSF) on the diode reversal I-V characteristic was carried out at three different temperatures. It is shown that OSF can affect reversal leakage current with respect to size and density. With proper selection of the oxidation temperature and especially with introduction of TCA 111 into the oxidizing atmosphere, it is possible to suppress the growth of OSF and reduce the leakage current in PN junctions.