首页> 外文会议>Electrical Insulation, 1990., Conference Record of the 1990 IEEE International Symposium on >Electrical properties of polyimide Langmuir-Blodgett films sandwiched between metal and superconducting electrodes
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Electrical properties of polyimide Langmuir-Blodgett films sandwiched between metal and superconducting electrodes

机译:夹在金属和超导电极之间的聚酰亚胺Langmuir-Blodgett膜的电性能

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The electrical properties of thermally stable multilayer Langmuir-Blodgett (LB) films of polyimide (PI) were examined for cases of Al/PI/Al, Au/PI/Au and Au/PI/(Pb-Bi) junctions. The monolayer thickness of the multilayer PI LB films was about 0.4 nm, and Pb-Bi is a superconducting electrode. The authors also fabricated Nb/Au/PI/(Pb-Bi) Josephson junctions, and examined the electrical properties of the junctions at a temperature of 4.2 K. For Nb/Au/PI/(Pb-Bi) junctions, the typical I-V characteristic for a weakly coupled superconductor was seen. For Au/PI/Au junctions, it was concluded that PI LB layers become good electrically insulating barriers when the number of deposited layers is greater than about 30. For Al/PI/Al junctions, it is shown that an aluminum native oxide layer formed on the base Al electrode makes a significant contribution to the electrical conduction through the PI layer.
机译:对于Al / PI / Al,Au / PI / Au和Au / PI /(Pb-Bi)结,检查了聚酰亚胺(PI)的热稳定多层Langmuir-Blodgett(LB)薄膜的电性能。多层PI LB膜的单层厚度为约0.4nm,并且Pb-Bi是超导电极。作者还制造了Nb / Au / PI /(Pb-Bi)Josephson结,并研究了在4.2 K温度下该结的电性能。对于Nb / Au / PI /(Pb-Bi)结,典型的IV可以看到弱耦合超导体的特性。对于Au / PI / Au结,可以得出结论,当沉积的层数大于约30时,PI LB层成为良好的电绝缘势垒。对于Al / PI / Al结,表明形成了铝天然氧化物层铝基电极上的电极对通过PI层的电导通做出了重大贡献。

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