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Novel IR-OBIRCH application in gate oxide failure analysis

机译:新型IR-OBIRCH在栅极氧化物失效分析中的应用

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摘要

Emission microscopy (EMMI) is commonly used for fault isolation of gate oxide (gox) failures but often fails when the defect has infrared (IR) emission. Infrared optical beam induced resistance change (IR-OBIRCH) is introduced to do fault isolation of gox failures emitting in the infrared range. Compared to liquid crystal (LC) and fluorescent microthermal imaging (FMI), this technique is an easy method to obtain the location of IR emitting gox failures with high spatial resolution.
机译:发射显微镜(EMMI)通常用于故障隔离栅氧化物(gox)故障,但是当缺陷具有红外(IR)发射时通常会失败。引入红外光束感应电阻变化(IR-OBIRCH)来对在红外范围内发射的gox故障进行故障隔离。与液晶(LC)和荧光微热成像(FMI)相比,此技术是一种获得空间分辨率高的IR发射gox故障位置的简便方法。

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