首页> 外文会议>Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE >Design and packaging approach for MMIC insertion in a broadband 4*4 microwave switch matrix
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Design and packaging approach for MMIC insertion in a broadband 4*4 microwave switch matrix

机译:MMIC插入宽带4 * 4微波开关矩阵的设计和封装方法

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摘要

The design and packaging approach, as well as performance results, for a lightweight broadband (3.5- to 6.5-GHz) 4*4 microwave switch matrix (MSM) for C-band uplink and/or downlink onboard communications satellite applications are presented. A GaAs monolithic microwave integrated-circuit (MMIC) dual-gate field-effect transistor (FET) switch element with chip dimensions of 1.5 mm*2.5 mm forms a key building block of this miniaturized crossbar MSM. Over the 3.5- to 6.5-GHz frequency range, on-to-off isolation for all 16 paths is measured to be greater than 50 dB. The MSM insertion loss and path-to-path insertion loss variations, are less than 6.25 dB and 1 dB, respectively.
机译:提出了针对C波段上行和/或下行机载通信卫星应用的轻量级宽带(3.5至6.5 GHz)4 * 4微波开关矩阵(MSM)的设计和封装方法以及性能结果。具有1.5mm * 2.5mm芯片尺寸的GaAs单片微波集成电路(MMIC)双栅场效应晶体管(FET)开关元件构成了这种小型纵横制MSM的关键组成部分。在3.5至6.5 GHz频率范围内,所有16条路径的通断隔离度均大于50 dB。 MSM插入损耗和路径到路径插入损耗的变化分别小于6.25 dB和1 dB。

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