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The improvement of photolithographic fidelity of two-dimensional structures through double exposure method

机译:二维结构通过双曝光方法改善二维结构的改善

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With the semiconductor fabrication groundrule approaching the 32 nm node, double exposure or patterning method with 1.35 NA immersion seems to be the primary candidate due to its relative easiness to implement when compared to the other two competitors, the high refractive index immersion and the 13.4 nm extremely ultraviolet (EUV) lithography. However, the splitting of one mask into two is not a trivial task. In this paper, we would like to discuss about the best splitting method for several typical 2D structures, such as the isolated opposing line (or space) end shortening, T-like structures with narrow gaps, etc. From our recent experimental studies, we have found that, for line and space photolithography, the optimized illumination condition has a sigma value very close to 0.5. When compared to the single exposure processes, which will typically use more annular condition, a sigma of 0.5 can generate worse process windows for isolated features. This will put more pressure on the precision of the already challenging optical proximity correction (OPC) because the doubly exposed patterns and singly exposed patterns follow two different models. In our study, we find that the extra degrees of freedom in the double exposure method can be utilized to repair some intrinsic printing deficiency, such as, line end shortening. In this paper, we will analyze each typical 2D structure and, for each splitting method of the typical 2D features we study, we will discuss its capabilities in realizing good process windows, the MEF, and OPC correction easiness.
机译:对于接近32nm节点的半导体制造,双曝光或图案化方法具有1.35 na浸没似乎是主要候选者,因为它相对容易实现,与其他两个竞争对手相比,高折射率浸泡和13.4nm。极紫外(EUV)光刻。然而,将一个掩码分成两个的分割不是一个微不足道的任务。在本文中,我们想讨论几个典型的2D结构的最佳分裂方法,例如隔离的相对线(或空间)结束缩短,与我们最近的实验研究的狭窄间隙等的T样结构,我们发现,对于线和空间光刻,优化的照明条件具有非常接近0.5的Sigma值。与通常使用更多环形条件的单个曝光过程相比,0.5的Sigma可以为隔离特征产生更糟糕的过程窗口。这将对已经具有挑战性的光学邻近校正(OPC)的精度进行了更大的压力,因为双所曝光的图案和单个曝光的图案遵循两个不同的模型。在我们的研究中,我们发现双曝光方法中的额外自由度可用于修复一些内在的印刷缺陷,例如线结束缩短。在本文中,我们将分析每个典型的2D结构,并且对于我们研究的典型2D特征的每个分裂方法,我们将讨论实现良好过程窗口,MEF和OPC校正容易的功能。

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