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Understanding and Mitigating Bridge Defects in Block Copolymer Directed Self-Assembly through Computational Materials Design and Optimization

机译:通过计算材料设计和优化来理解和缓解嵌段共聚物定向自组装中的桥缺陷

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Block copolymers (BCPs) are appealing materials to the lithography community because of their potential to extend Moore's Law beyond the 10nm node. Not only do BCPs have the ability to microphase separate into structures such as cylinders and lamellae at single-nm length scales, but device fabricators also have control over the alignment of these structures by manipulating the energy landscape of the substrate via directed self-assembly (DSA). Despite the promise that BCPs show in offering an economical enhancement to optical lithography, the levels of defectivity in BCP-patterned devices are still above the desired levels for industrial-scale implementation. A troublesome defect mode that has been observed in experimental BCP structures is the bridge defect. Previous simulation studies by Henderson and coworkers have shown that affinity defects in chemoepitaxial underlayers have the potential to spawn bridge defects in the overlying BCP film. An important consideration in characterizing bridge defectivity is to evaluate and determine which BCP material properties are capable of inhibiting bridge propagation through a BCP film aligned atop an underlayer containing an affinity defect. In this work, coarse-grained molecular dynamics simulations were used to model BCPs with various energetic and structural properties to identify which properties impact bridge propagation. Although there was minimal correlation between BCP properties and bridge propagation, a kinetic survey showed that bridge defects generally reached their maximum thickness within the first 100ns of thermal annealing. As the BCP began undergoing long-range alignment, the bridges slowly healed before reaching an equilibrium thickness of roughly one BCP chain.
机译:嵌段共聚物(BCP)在光刻领域具有吸引力,因为它们具有将摩尔定律扩展到10nm以上节点的潜力。 BCP不仅具有以单纳米长度尺度微相分离成圆柱体和薄片等结构的能力,而且器件制造商还可以通过定向自组装来操纵基板的能量分布,从而控制这些结构的对准( DSA)。尽管BCP有望在经济上增强光刻技术,但BCP图案化器件中的缺陷水平仍高于工业规模实现所需的水平。在实验BCP结构中观察到的一种麻烦的缺陷模式是桥缺陷。亨德森及其同事先前的模拟研究表明,化学外延底层中的亲和缺陷可能会在上覆的BCP膜中产生桥缺陷。表征桥缺陷的重要考虑因素是评估和确定哪些BCP材料性能能够抑制桥穿过穿过在一个包含亲和缺陷的底层之上排列的BCP膜的传播。在这项工作中,使用了粗粒分子动力学模拟来对具有各种高能和结构特性的BCP进行建模,以确定哪些特性会影响桥梁的传播。尽管BCP特性与桥梁传播之间的相关性最小,但动力学调查表明,桥梁缺陷通常在热退火的前100 ns内达到其最大厚度。当BCP开始进行远距离对准时,桥逐渐愈合,直到达到大约一条BCP链的平衡厚度。

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