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A Fast TCAD-based Methodology for Variation Analysis of Emerging Nano-Devices

机译:基于快速的基于TCAD的纳米装置变化分析方法

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Variability analysis of nanoscale transistors and circuits is emerging as a necessity at advanced technology nodes. Technology Computer Aided Design (TCAD) tools are powerful ways to get an accurate insight of Process Variations (PV). However, obtaining both fast and accurate device simulations is impractical with current TCAD solvers. In this paper, we propose an automated output prediction method suited for fast PV analysis. Coupled with TCAD simulations, our methodology can substantially reduce the time complexity and cost of variation analysis for emerging technologies. We overcome the simulation obstacles and preserve accuracy, using a neural network based regression to predict the output of individual process simulations. Experiments indicate that, after the training process, the proposed methodology effectively accelerate TCAD-based PV simulations close to compact-model-based simulations. Therefore, the methodology can be an excellent opportunity in enabling extensive statistical simulations such as Monte-Carlo for emerging nano-devices.
机译:纳米级晶体管和电路的可变性分析是在先进技术节点的必然性。技术计算机辅助设计(TCAD)工具是对过程变化(PV)准确介绍的强大方法。然而,获得快速和准确的设备模拟对于当前的TCAD溶剂是不切实际的。在本文中,我们提出了一种适用于快速PV分析的自动输出预测方法。与TCAD模拟相结合,我们的方法可以大大降低新兴技术变异分析的时间复杂性和成本。我们克服了模拟障碍并使用基于神经网络的回归来预测单个过程模拟的输出。实验表明,在训练过程之后,所提出的方法有效地加速了基于TCAD的PV模拟,接近基于紧凑模型的模拟。因此,该方法可以是实现广泛的统计模拟,例如用于新出现的纳米器件的大规模统计模拟。

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