首页> 外文会议>IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems >Sensing with Memristive Complementary Resistive Switch: Modelling and Simulations
【24h】

Sensing with Memristive Complementary Resistive Switch: Modelling and Simulations

机译:忆阻互补电阻开关的传感:建模和仿真

获取原文

摘要

Sensors give factual and process information about the environment or other physical phenomena. Sensing using memristors has been recently introduced for its potential for high density integration and miniaturization. Complementary Resistive Switch (CRS) based sensor provides an extremely efficient crossbar array that reduces the sneak current. The objective of this paper is to introduce and evaluate a circuit model for sensing using memristive complementary resistive switch. We introduce a reliable SPICE implementation of memristor model that captures the sensing behaviour of memristor. Our simulation results also validate the SPICE model for CRS sensing architecture, whose parameters could be easily adapted to match experimental data. The results also investigate the sensitivity and device behaviour of memristor and CRS sensor device in the presence of oxidizing and reducing gases of different concentration.
机译:传感器提供有关环境或其他物理现象的事实和过程信息。由于忆阻器具有高密度集成和小型化的潜力,最近已引入使用忆阻器的传感。基于互补电阻开关(CRS)的传感器提供了一种非常有效的交叉开关阵列,可减少潜电流。本文的目的是介绍和评估使用忆阻互补电阻开关进行感测的电路模型。我们介绍了一个可靠的SPICE忆阻器模型实现,该模型捕获了忆阻器的感测行为。我们的仿真结果还验证了用于CRS传感架构的SPICE模型,该模型的参数可以轻松匹配实验数据。结果还研究了在不同浓度的氧化性和还原性气体存在下忆阻器和CRS传感器器件的灵敏度和器件性能。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号