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Parallel memristive filaments model applicable to bipolar and filamentary resistive switching

机译：平行忆阻丝模型适用于双极和丝状电阻切换

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摘要

The concept of memristive filaments (MFs) is introduced, which is based on the memristors developed by the Hewlett-Packard group. The effects of key parameters on electrical properties are elucidated. The current-voltage features of bipolar and filamentary resistive switching are reproduced by using a parallel MF model with dynamic growth and rupture of multiple MFs. This model can be extended and adapted to most nanosized transition metal oxide memristors.
机译：介绍了忆阻丝（MFs）的概念，该概念基于惠普集团开发的忆阻器。阐明了关键参数对电性能的影响。通过使用具有多个MF的动态增长和破裂的并行MF模型，可以再现双极和丝状电阻式开关的电流-电压特征。该模型可以扩展并适用于大多数纳米尺寸的过渡金属氧化物忆阻器。

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  • 来源
    《Applied Physics Letters》 |2011年第11期|p.113518.1-113518.3|共3页
  • 作者

    Xinjun Liu; Kuyyadi P. Biju; Joonmyoung Lee; Jubong Park; Seonghyun Kim; Sangsu Park; Jungho Shin; Sharif Md. Sadaf; Hyunsang Hwang;

  • 作者单位

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, South Korea;

    Department of Nanobio Materials and Electronics (WCU), Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-7/2, South Korea;

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, South Korea;

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, South Korea;

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, South Korea;

    Department of Nanobio Materials and Electronics (WCU), Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-7/2, South Korea;

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, South Korea;

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, South Korea;

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, South Korea,Department of Nanobio Materials and Electronics (WCU), Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-7/2, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-18 03:18:09

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